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| MITSUBISHI SEMICONDUCTOR M54567P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54567P and M54567FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION VCC OUTPUT1 1 16 COM COMMON O1 2 15 O4 OUTPUT4 14 IN4 INPUT4 13 12 INPUT1 IN1 3 4 GND 5 INPUT2 IN2 6 GND 11 IN3 INPUT3 10 O3 OUTPUT3 9 COM COMMON FEATURES High breakdown voltage (BVCEO 50V) High-current driving (Ic(max) = 1.5A) With clamping diodes Driving available with NMOS IC output Wide operating temperature range (Ta = -20 to +75C) OUTPUT2 O2 7 VCC 8 16P4(P) Package type 16P2N-A(FP) CIRCUIT DIAGRAM APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and power amplification INPUT VCC 22K 8K COM OUTPUT 2K 5.5K 3K GND The four circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : FUNCTION The M54567P and M54567FP each have four circuits, which are made of PNP transistors and NPN Darlington transistors. The input has 8k, and a spike-killer clamping diode is provided between the output pin (collector) and COM pin. All output transistor emitters are connected to the GND pin. Collector current is 1.5A maximum. The maximum collectoremitter voltage is 50V. The M54567FP is enclosed in a molded small flat package, enabling space-saving design. ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO IC VI VR IF Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage Collector current (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Output, H Current per circuit output, L Ratings 10 -0.5 ~ +50 1.5 -0.5 ~ +30 50 1.5 1.0 1.92(P)/1.00(FP) -20 ~ +75 -55 ~ +125 Unit V V A V V A W C C Aug. 1999 Input voltage Clamping diode reverse voltage Clamping diode forward current Power dissipation Operating temperature Storage temperature Pulse Width 10ms, Duty Cycle 5% Pulse Width 100ms, Duty Cycle 5% Ta = 25C, when mounted on board MITSUBISHI SEMICONDUCTOR M54567P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol VCC VO Supply voltage Output voltage Collector current (Current per 1 circuit when 4 circuits are coming on simultaneously) "H" input voltage "L" input voltage VCC = 5V, Duty Cycle P : no more than 4% FP : no more than 2% VCC = 5V, Duty Cycle P : no more than 18% FP : no more than 9% Parameter (Unless otherwise noted, Ta = -20 ~ +75C) min 4 0 0 0 VCC-0.5 0 Limits typ 5 -- -- -- -- -- max 6 50 1.25 Unit V V IC A 0.7 VCC VCC-3.5 V V VIH VIL ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO ICC VCE (sat) II IR VF hFE Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Test conditions ICEO = 100A VCC = 6V, VI = 0.5V VCC = 4V, VI = 0.5V, IC = 1.25A VCC = 4V, VI = 0.5V, IC = 0.7A VI = VCC-3.5V VI = VCC-6V VR = 50V IF = 1.25A, VCC open VCC = 4V, VCE = 4V, IC = 1A, Ta = 25C Limits min 50 -- -- -- -- -- -- -- 4000 typ+ -- 3.0 1.6 1.1 -0.3 -0.58 -- 1.6 30000 max -- 4.5 2.2 1.7 -0.6 -0.95 100 2.3 -- Unit V mA V mA A V -- Collector-emitter breakdown voltage Supply current (One circuit coming on) Collector-emitter saturation voltage Input current Clamping diode reverse current Clamping diode forward voltage DC amplification factor + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 190 5300 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT VCC Measured device OPEN PG 50 CL OUTPUT VO TIMING DIAGRAM INPUT 50% RL 50% OUTPUT 50% 50% ton (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VI = 0.5 to 4V (2) Input-output conditions : RL = 8.3, VO = 10V, VCC = 4V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Aug. 1999 MITSUBISHI SEMICONDUCTOR M54567P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 1.6 M54567P VCC = 4V VI = 0.5V Thermal Derating Factor Characteristics 2.0 Power dissipation Pd (W) Collector current Ic (A) 1.5 1.2 1.0 M54567FP 0.8 Ta = 25C 0.5 0.4 Ta = 75C Ta = -20C 0 0 25 50 75 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Duty-Cycle-Collector Characteristics (M54567P) 2.0 2.0 Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54567P) *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 5V *Ta = 75C Collector current Ic (A) 1.5 Collector current Ic (A) 1.5 1.0 *VCC = 5V *Ta = 25C 1.0 0.5 0 0 20 40 60 80 100 0.5 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. 0 20 40 60 80 100 Duty cycle (%) Duty-Cycle-Collector Characteristics (M54567FP) 2.0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 5V *Ta = 25C Duty cycle (%) Duty-Cycle-Collector Characteristics (M54567FP) 2.0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 5V *Ta = 75C Collector current Ic (A) Collector current Ic (A) 1.5 1.5 1.0 0.5 0 20 40 60 80 100 1.0 0.5 100 0 0 0 20 40 60 80 Duty cycle (%) Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR M54567P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DC Amplification Factor Collector Current Characteristics 105 DC amplification factor hFE 7 5 3 2 VCC = 4V VCE = 4V Grounded Emitter Transfer Characteristics 1.6 VCC = 4V VCE = 4V Collector current Ic (A) Ta = 75C 1.2 104 7 5 3 2 Ta = 25C Ta = -20C 0.8 Ta = 75C Ta = 25C 103 7 5 3 2 0.4 Ta = -20C 102 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Collector current Ic (mA) 0 0 0.5 1.0 1.5 2.0 Supply voltage-Input voltage VCC-VI (V) Input Characteristics -1.0 VCC = 5V Clamping Diode Characteristics 2.0 Forward bias current IF (A) -0.8 Input current II (mA) 1.5 -0.6 Ta = 25C Ta = -20C 1.0 -0.4 0.5 Ta = 75C Ta = -20C Ta = 25C -0.2 Ta = 75C 0 0 1 2 3 4 5 0 0 0.5 1.0 1.5 2.0 Supply voltage-Input voltage VCC-VI (V) Forward bias voltage VF (V) Supply Current Characteristics 10.0 VI = 0.5V Supply current Icc (mA) 8.0 6.0 Ta = 25C Ta = -20C 4.0 Ta = 75C 2.0 0 0 2 4 6 8 10 Supply voltage VCC (V) Aug. 1999 |
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